Radiation Effects in Semiconductors (Devices, Circuits, and Systems)

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We show that the irradiation time needed to reach very high total dose can be reduced by using Pelletron accelerator facilities instead of conventional irradiation facilities.

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Gnana Prakash and N. Request Permissions. Holmes-Siedle, L. Cressler, G. Praveen, N.

Pushpa, Y. Prabakara, G. Govindaraj, J. Cressler, A. Pushpa, A. Tripathi, D. Revannasiddaiah, J. Campabadal, C. Fleta, M. Key, M. Lozano, C.

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Naik, D. Revannasiddaiah, Evaluation of pelletron accelerator facility to study radiation effects on semiconductor devices, in: AIP Conference Proceedings, , p. Praveen, A. Gupta, D. Cressler, S. Prakash, Y. Prabhakara Rao, A. Tripati, D. Naik, J. Srour, C. Marshall, P.

Bonfiglioli, A. Ferro, A. Mojoni, Electron microscope investigation on the nature of tracks of fission products in mica, Journal of Applied Physics 32 Meftah, F. Brisard, J. Costantini, E. Dooryhee, M. Hage-Ali, M. Hervieu, J. Stoquert, F. Studer, M. Fleischer, P. Price, R. Weeks, Paramagnetic resonance of lattice defects in irradiated quartz, Journal of Applied Physics 27 Richter, J. Stuke, U. Siddappa, Swift heavy-ion irradiation effects on electrical and defect properties of NPN transistors, Semiconductor Science and Technology 19 Prakash, K. Praveen, J.

Cressler, D. Biersack, L. Haggmark, A Monte Carlo computer program for the transport of energetic ions in amorphous targets, Nuclear Instruments and Methods Madhu, S.

Radiation Effects (REC)

Kulkarni, M. Ravindra, R. Pushpa, J. Pecht, R. Radjojcic, G. Prakash, A.

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Radiation Effects (REC)

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Marshall, R. Ladbury, M. El-Diwany, C. Mitchell, L. Rockett, T.